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Image C2M0160120D

C2M0160120D

描述:

MOSFET SIC MOSFET 1200V RDS ON 160 mOhm
Manufacturer: Cree, Inc.
Product Category: MOSFET
RoHS: Yes
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs - Gate-Source Breakdown Voltage: - 10 V, + 25 V
Id - Continuous Drain Current: 17.7 A
Rds On - Drain-Source Resistance: 160 mOhms
Configuration: Single
Vgs th - Gate-Source Threshold Voltage: 2.5 V
Qg - Gate Charge: 32.6 nC
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 125 W
Mounting Style: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Brand: Cree, Inc.
Channel Mode: Enhancement
Fall Time: 7 ns
Forward Transconductance - Min: 4.1 S
Minimum Operating Temperature: - 55 C
Rise Time: 12 ns
Factory Pack Quantity: 30
Typical Turn-Off Delay Time: 13 ns

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